NTGS3441BT1G【PDF 2/6 页】MOSFET P-CH 20V 2.2A 6-TSOP

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NTGS3441B

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t v 5 s (Note 3)

Junction-to-Ambient – Minimum Pad (Note 4)

Symbol

R q JA

R q JA

R q JA

Value

110

80

190

Unit

° C/W

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V (BR)DSS

V GS = 0 V, I D = -250 m A

-20

V

Zero Gate Voltage Drain Current

I DSS

V GS = 0 V,

T J = 25 ° C

-1.0

m A

V DS = -20 V

T J = 70 ° C

-5.0

Gate-to-Source Leakage Current

I GSS

V DS = 0 V, V GS = ± 8 V

$ 0.1

m A

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Drain-to-Source On Resistance

V GS(TH)

R DS(on)

V GS = V DS , I D = -250 m A

V GS = -4.5 V, I D = -3.0 A

-0.4

59

-0.9

90

V

m W

V GS = -2.5 V, I D = -2.4 A

79

130

Forward Transconductance

g FS

V DS = -10 V, I D = -3.0 A

5.8

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C ISS

630

pF

Output Capacitance

Reverse Transfer Capacitance

C OSS

C RSS

V GS = 0 V, f = 1 MHz, V DS = -10 V

93

49

Total Gate Charge

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Q G(TOT)

Q G(TH)

Q GS

Q GD

V GS = -4.5 V, V DS = -10 V;

I D = -3.0 A

6.1

0.5

1.0

1.4

9.0

nC

SWITCHING CHARACTERISTICS , V GS = 4.5 V (Note 6)

Turn-On Delay Time

t d(ON)

8.0

13

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = -4.5 V, V DS = -10 V,

I D = -1.0 A, R G = 6.0 W

6.0

40

33

10

64

53

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V SD

V GS = 0 V,

T J = 25 ° C

-0.8

-1.2

V

I S = -1.6 A

Reverse Recovery Time

t RR

V GS = 0 V, dI SD /d t = 100 A/ m s,

12

24

ns

I S = -1.6 A

5. Pulse Test: pulse width v 300 m s, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

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